New NAND flash paves the way for super cheap, extra large SSDs
SK hynix has developed a new 4D NAND flash memory with a huge 238 layers for fast, high-capacity new SSDthe company has announced.
Unveiled on stage at the Flash Memory Summit in Santa Clara, the new memory chip is described as “the world’s first 238-layer 512Gb TLC 4D NAND” and is expected to enter mass production in the first half of 2023.
Compared to the previous 176-layer model, the new NAND is said to offer 50% faster data transfer speeds (2.4Gb/s), 21% higher data read energy efficiency and 34% overall productivity gains.
The arrival of 238-layer products will allow SK Hynix to take the record for the world’s highest NAND stack from rival manufacturer Micron, whose latest model has a measly 232 layers.
238-layer 4D NAND flash
NAND flash is a non-volatile memory used in a variety of storage devices ranging from storage card, USB stick and portable drive to SSD server and client devices.
The general trend in the development of NAND flash is to reduce the cost per unit capacity and increase the storage density, effectively eliminating the last remaining use case of traditional flash memory Hard disk driveThe arrival of SK hynix’s 238-layer product marks another step in this journey.
Unlike other NAND products on the market, the latest chips in the company’s lineup feature a “4D” architecture, with logic circuitry beneath the memory cells. According to SK hynix, this design allows for “smaller cell area per unit, thereby increasing production efficiency”.
Jungdal Choi, head of NAND development at SK hynix, said, “SK hynix has secured top global competitiveness in terms of cost, performance and quality by launching 238-layer products based on its 4D NAND technology.”
Perhaps unexpectedly, the new 238-layer NAND will make its way to client devices first, which will excite content creators and PC gamers alike.New chips will come sooner or later smart phone and high-capacity servers.
SK Hynix also revealed that it is working on a 1Tb 238-layer product that will double the storage density of its latest chips when it launches next year. “We will continue to innovate and find breakthroughs in technological challenges,” Cui added.
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